Electron Localization in Sb-Doped Si/SiGe Superlattices

Electron localization in Co/Ni superlattices.

The residual resistivity in Co/Ni superlattices is shown to oscillate as a function of superlattice period for fixed Co to Ni thickness ratio. Additional experimental evidence shows that this behavior is enhanced when randomness is artificially introduced in the individual layer thickness. We analyze this in terms of a scattering mechanism associated with the presence of localized electron eige...

Electron Transport in Semiconductor Superlattices

In this paper, we rigorously derive a diffusion model for semiconductor superlattices, starting from a kinetic description of electron transport at the microscopic scale. Electron transport in the superlattice is modelled by a collisionless Boltzmann equation subject to a periodic array of localized scatters modeling the periodic heterogeneities of the material. The limit of a large number of p...

Design of InAs/Ga(In)Sb superlattices for infrared sensing

New infrared detector materials with high sensitivity, multi-spectral capability, improved uniformity and lower manufacturing costs are required for numerous infrared sensing applications. One material system has shown great theoretical and experimental promise for these applications: InAs/InxGa1KxSb type-II superlattices. These superlattices offer a large design space for adjusting not only th...

Weak localization and electron-electron interactions in indium-doped ZnO nanowires.

Single crystal ZnO nanowires doped with indium are synthesized via the laser-assisted chemical vapor deposition method. The conductivity of the nanowires is measured at low temperatures in magnetic fields with directions both perpendicular and parallel to the wire axes. A quantitative fit of our data is obtained, consistent with the theory of a quasi-one-dimensional metallic system with quantum...

WEAK LOCALIZATION EFFECTS IN GaAs DOPING SUPERLATTICES